Claeys, Cor L.: Radiation effects in advanced semiconductor materials and devices
/ C. Claeys ; E. Simoen. - Berlin : Springer, 2002. - XXII, 401 S. : graph. Darst.; 24 cm - (Springer series in materials science; 57)
ISBN 978-3-540-43393-4 / 3-540-43393-7 Pp. : EUR 85.55
Literaturverz. S. 351 - 401
Quelle: DNB
Kircher, Roland: Three-dimensional simulation of semiconductor devices
/ R. Kircher ; W. Bergner. - Basel : Birkhäuser, 1991. - 124 S. : Ill., graph. Darst.; 23 cm - (Progress in numerical simulation for microelectronics; Vol. 1)
ISBN 978-3-7643-2644-9 / 3-7643-2644-1 Pp. : DM 98.00, sfr 98.00
Literaturverz. S. 117 - 124
Quelle: DNB
Kersch, Alfred: Transport simulation in microelectronics
/ Alfred Kersch ; William J. Morokoff. - Basel : Birkhäuser, 1995. - 235 S. : graph. Darst.; 23 cm - (Progress in numerical simulation for microelectronics; Vol. 3)
ISBN 978-3-7643-5168-7 / 3-7643-5168-3 Pp. : ca. DM 128.00, ca. sfr 108.00
Literaturverz. S. 225 - 232
Quelle: DNB
Li, Jingbo: Two-dimensional semiconductors
: synthesis, physical properties and applications / Jingbo Li, Zhongming Wei, Jun Kang. - Weinheim, Germany : Wiley-VCH, 2020. - xv, 175 Seiten : Illustrationen; 25 cm, 508 g
ISBN 978-3-527-34496-3 / 3-527-34496-9 Festeinband : circa EUR 159.00 (DE) (freier Preis)
Quelle: DNB
Ultrahigh speed optical transmission technology
/ Hans-Georg Weber ; Masataka Nakazawa ed.. - Berlin : Springer, 2007. - VI, 481 S. : Ill., graph. Darst.; 24 cm - (Optical and fiber communications reports; 3)
ISBN 978-3-540-23878-2 / 3-540-23878-6 Pp.
Literaturangaben
Quelle: DNB
